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PDF 14N50 Data sheet ( Hoja de datos )

Número de pieza 14N50
Descripción N-CHANNEL POWER MOSFET
Fabricantes Unisonic Technologies 
Logotipo Unisonic Technologies Logotipo



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No Preview Available ! 14N50 Hoja de datos, Descripción, Manual

UNISONIC TECHNOLOGIES CO., LTD
14N50
Preliminary
14A, 500V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 14N50 is an N-Channel enhancement mode power
MOSFET. The device adopts planar stripe and uses DMOS
technology to minimize and provide lower on-state resistance and
faster switching speed. It can also withstand high energy pulse
under the avalanche and commutation mode conditions.
The UTC 14N50 is ideally suitable for high efficiency switch mode
power supply, power factor correction and electronic lamp ballast
based on half bridge topology.
1
FEATURES
* RDS(ON) < 0.42@VGS = 10V
* Ultra low gate charge (typical 43nC )
* Low reverse transfer Capacitance ( CRSS = typical 20pF )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
TO-263
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
14N50L-TQ2-T
14N50G-TQ2-T
14N50L-TQ2-R
14N50G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-263
TO-263
Pin Assignment
123
GDS
GDS
Packing
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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14N50 pdf
14N50
Preliminary
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
-
+
VDS
-
L
Power MOSFET
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
VDD
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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