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PDF KMB054N40IA Data sheet ( Hoja de datos )
| Número de pieza | KMB054N40IA | |
| Descripción | N-Channel Trench MOSFET | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
KMB054N40IA
N-Ch Trench MOSFET
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for Back-light Inverter and Power
Supply.
FEATURES
VDSS=40V, ID=54A.
Low Drain-Source ON Resistance.
: RDS(ON)=8.5m (Max.) @ VGS=10V
: RDS(ON)=11m (Max.) @ VGS=4.5V
Super High Dense Cell Design.
High Power and Current Handling Capability.
MAXIMUM RATING (Ta=25 Unless otherwise Noted)
CHARACTERISTIC
SYMBOL N-Ch UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
DC@TC=25
Pulsed
Drain-Source-Diode Forward Current
@TC=25
Drain Power Dissipation
@Ta=25
(Note1)
(Note2)
(Note1)
(Note2)
VDSS
VGSS
ID
IDP
IS
PD
40 V
20 V
54
A
100
100 A
45
W
3.1
Maximum Junction Temperature
Tj
Storage Temperature Range
Tstg
Thermal Resistance, Junction to Case (Note1)
RthJC
Thermal Resistance, Junction to Ambient (Note2) RthJA
Note 1) RthJC means that the infinite heat sink is mounted.
Note 2) Surface Mounted on 1” 1” Pad of 2 oz copper.
150
-55 150
2.8
40
/W
/W
PIN CONNECTION (TOP VIEW)
D
2
2
A
C
M
N
G
FF
123
H
J
DIM MILLIMETERS
A 6.6+_0.2
B 6.1+_0.2
PC
D
5.34 +_0.3
0.7 +_ 0.2
E 9.3 +_0.3
F 2.3+_ 0.2
G 0.76+_0.1
H 2.3+_0.1
L J 0.5+_ 0.1
K 1.8 +_ 0.2
L 0.5 +_ 0.1
M 1.0 +_ 0.1
N 0.96 MAX
P 1.02 +_ 0.3
IPAK(1)
Marking
Type Name
KMB
054N40
IA
Lot No
13
1
G
2009. 7. 30
3
S
Revision No : 0
1/5
1 page  
KMB054N40IA
Fig11. Gate Charge Circuit and Wave Form
Schottky
ID Diode
0.5 VDSS
1.0 mA
VGS
ID
VDS
VGS
10 V
Qgs Qgd
Qg
Q
Fig12. Resistive Load Switching
0.5 VDSS
6Ω
10 V
VGS
RL
VDS
VDS 90%
VGS 10%
td(on)
tr
ton
td(off)
tf
toff
2009. 7. 30
Revision No : 0
5/5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet KMB054N40IA.PDF ] | |
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