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KMB035N40DB fiches techniques PDF

KEC - N-Channel Trench MOSFET

Numéro de référence KMB035N40DB
Description N-Channel Trench MOSFET
Fabricant KEC 
Logo KEC 





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KMB035N40DB fiche technique
SEMICONDUCTOR
TECHNICAL DATA
KMB035N40DB
N-Ch Trench MOSFET
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for Back-light Inverter and Power
Supply.
FEATURES
VDSS=40V, ID=35A.
Low Drain to Source On-state Resistance.
: RDS(ON)=12.0m (Max.) @ VGS=10V
: RDS(ON)=17.0m (Max.) @ VGS=4.5V
A
CD
B
H
G
FF
J
E
123
O
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_ 0.20
E 2.70 +_ 0.15
F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
O Max 0.1
MAXIMUM RATING (
)
CHARACTERISTIC
SYMBOL N-Ch UNIT
Drain to Source Voltage
Gate to Source Voltage
VDSS
VGSS
40 V
20 V
Drain Current
DC@TC=25
Pulsed
(Note1)
(Note2)
ID
IDP
35
A
140
@TC=25
Drain Power Dissipation
@Ta=25
(Note1)
(Note2)
PD
43
W
3.1
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Case
(Note1)
Tj
Tstg
RthJC
150
-55 150
2.9
/W
Thermal Resistance, Junction to Ambient (Note2) RthJA 40 /W
Note 1) RthJC means that the infinite heat sink is mounted.
Note 2) Surface Mounted on 1 1 Pad of 2 oz copper.
DPAK (1)
* Weight : 0.33g(typ)
PIN CONNECTION (TOP VIEW)
2009. 11. 9
Revision No : 1
1/2

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