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NXP Semiconductors - Ultra low capacitance unidirectional ESD protection diode

Numéro de référence PESD5V0X1UAB
Description Ultra low capacitance unidirectional ESD protection diode
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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PESD5V0X1UAB fiche technique
PESD5V0X1UAB
Ultra low capacitance unidirectional ESD protection diode
Rev. 1 — 15 February 2011
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance unidirectional ElectroStatic Discharge (ESD) protection diode in a
SOD523 (SC-79) ultra small and flat lead Surface-Mounted Device (SMD) plastic
package designed to protect one signal line from the damage caused by ESD and other
transients.
The combination of extremely low capacitance and ultra low clamping voltage makes the
device ideal for high-speed data line protection applications.
1.2 Features and benefits
ESD protection of one line
Ultra low diode capacitance
Cd = 1.55 pF
Ultra low clamping voltage: VCL = 9 V
Ultra low leakage current: IRM = 1 nA
ESD protection up to 15 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); IPP = 2 A
AEC-Q101 qualified
1.3 Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
10/100/1000 Mbit/s Ethernet
Communication systems
Portable electronics
Subscriber Identity Module (SIM) card
protection
USB, High-Definition Multimedia
Interface (HDMI), FireWire
High-speed data lines
1.4 Quick reference data
Table 1.
Symbol
VRWM
Cd
Quick reference data
Parameter
reverse standoff voltage
diode capacitance
Conditions
f = 1 MHz; VR = 0 V
Min Typ Max Unit
- - 5.5 V
- 1.55 1.75 pF

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