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NXP Semiconductors - Ultra low capacitance bidirectional ESD protection diode

Numéro de référence PESD18VF1BL
Description Ultra low capacitance bidirectional ESD protection diode
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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PESD18VF1BL fiche technique
PESD18VF1BL
Ultra low capacitance bidirectional ESD protection diode
Rev. 1— 2 September 2013
Product data sheet
1. General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a
DFN1006-2 (SOD882) leadless ultra small Surface-Mounted Device (SMD) plastic
package designed to protect one signal line from the damage caused by ESD and other
transients.
2. Features and benefits
Ultra low diode capacitance Cd = 0.35 pF
High reverse standoff voltage VRWM = 18 V
Very small voltage dependency of the capacitance
ESD protection up to ±10 kV according to IEC 61000-4-2, level 4
3. Applications
NFC antenna protection
Protection of high-speed data lines
4. Quick reference data
Table 1.
Symbol
Cd
VRWM
Quick reference data
Parameter
Conditions
diode capacitance f = 1 MHz; VR = 0 V
reverse standoff
voltage
Min Typ Max Unit
0.28 0.35 0.5 pF
- - 18 V
5. Pinning information
Table 2.
Pin
1
2
Pinning information
Symbol Description
K1 cathode (diode 1)
K2 cathode (diode 2)
Simplified outline
Graphic symbol
12
Transparent
top view
DFN1006-2 (SOD882)
12
sym045

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