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PDF NX7002BKW Data sheet ( Hoja de datos )
| Número de pieza | NX7002BKW | |
| Descripción | single N-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
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NX7002BKW
60 V, single N-channel Trench MOSFET
20 March 2015
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323
(SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
• Logic-level compatible
• Very fast switching
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection > 2 kV HBM
3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - 60 V
VGS gate-source voltage
-20 -
20 V
ID
drain current
VGS = 10 V; Tsp = 25 °C
- - 330 mA
VGS = 10 V; Tamb = 25 °C
[1] - - 240 mA
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 200 mA; Tj = 25 °C
resistance
- 2.2 2.8 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
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1 page  
NXP Semiconductors
NX7002BKW
60 V, single N-channel Trench MOSFET
103 aaa-016988
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.50
0.33
102 0.20
0.25
0.10
0.05
0
0.02
0.01
10
10-3
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 aaa-016989
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.50
0.33
102
0.20
0.25
0.10
0.05
0.02
0.01
0
10
10-3
10-2
10-1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for drain 1 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NX7002BKW
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
5 / 15
5 Page 
NXP Semiconductors
1.425
(3×)
4.6
2.575
3.65 2.1
Fig. 20. Wave soldering footprint for SC-70 (SOT323)
NX7002BKW
60 V, single N-channel Trench MOSFET
1.8
09
(2×)
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot323_fw
NX7002BKW
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
11 / 15
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