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Numéro de référence | NX7002BKMB | ||
Description | N-channel Trench MOSFET | ||
Fabricant | NXP Semiconductors | ||
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1 Page
NX7002BKMB
60 V, N-channel Trench MOSFET
3 December 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Logic-level compatible
• Very fast switching
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection > 2kV HBM
3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - 60 V
VGS gate-source voltage
-20 -
20 V
ID
drain current
VGS = 10 V; Tamb = 25 °C
[1] - - 350 mA
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 200 mA; Tj = 25 °C
resistance
- 2.2 2.8 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.
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Pages | Pages 16 | ||
Télécharger | [ NX7002BKMB ] |
No | Description détaillée | Fabricant |
NX7002BKM | N-channel Trench MOSFET | NXP Semiconductors |
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