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NXP Semiconductors - N-channel Trench MOSFET

Numéro de référence NX7002BKMB
Description N-channel Trench MOSFET
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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NX7002BKMB fiche technique
NX7002BKMB
60 V, N-channel Trench MOSFET
3 December 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2kV HBM
3. Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - 60 V
VGS gate-source voltage
-20 -
20 V
ID
drain current
VGS = 10 V; Tamb = 25 °C
[1] - - 350 mA
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 200 mA; Tj = 25 °C
resistance
- 2.2 2.8 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.
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