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NXP Semiconductors - Bidirectional high-side power switch

Numéro de référence NX5P3001
Description Bidirectional high-side power switch
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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NX5P3001 fiche technique
NX5P3001
Bidirectional high-side power switch for charger and
USB-OTG combined applications
Rev. 1 — 11 September 2013
Product data sheet
1. General description
The NX5P3001 is an advanced bidirectional power switch and ESD-protection device for
combined USB-OTG and charger port applications. It includes undervoltage lockout,
overvoltage lockout and overtemperature protection circuits designed to automatically
isolate the power switch terminals when a fault condition occurs.
The device features two power switch input/output terminals (VBUSI and VBUSO), an
open-drain acknowledge output (ACK), an enable input which includes logic level
translation (EN) and low capacitance Transient Voltage Suppression (TVS) type
ESD-clamps for USB data and ID pins.
When EN is set HIGH the device enters a low-power mode, disabling all protection
circuits. When used in combined charger and USB-OTG applications the 30 V tolerant
VBUSI switch terminal is used as the supply and switch input when charging, for
USB-OTG the VBUSO switch terminal is used as the supply and switch input.
Designed for operation from 3.2 V to 6.35 V, it is used in battery charging and power
domain isolation applications to reduce power dissipation and extend battery life.
2. Features and benefits
30 V tolerant VBUSI supply pin
Wide supply voltage range from 3.2 V to 6.35 V
Automatic switch operation for charging within the supply range
ISW maximum 3 A continuous current
Low ON resistance: 62 m(typical) at a supply voltage of 5.0 V
1.8 V control logic input to open the switch
Soft start turn-on slew rate
Protection circuitry
Overtemperature protection
Overvoltage lockout
Undervoltage lockout
ESD protection:
HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2 kV
CDM AEC standard Q100-01 (JESD22-C101E)
IEC61000-4-2 contact discharge exceeds 8 kV for pins VBUSI, D, D+ and ID
Specified from 40 C to +85 C

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