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NXP Semiconductors - Logic controlled high-side power switch

Numéro de référence NX5P1000
Description Logic controlled high-side power switch
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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NX5P1000 fiche technique
NX5P1000
Logic controlled high-side power switch
Rev. 2 — 14 January 2014
Product data sheet
1. General description
The NX5P1000 is an advanced power switch and ESD- protection device for USB OTG
applications. The device includes under voltage and over voltage lockout, over-current,
over-temperature, reverse bias and in-rush current protection circuits. These circuits are
designed to isolate a VBUS OTG voltage source automatically from a VBUS interface pin
when a fault condition occurs. The device features two power switch terminals, one input
(VINT) and one output (VBUS). It has a current limit input (ILIM) for defining the
over-current and in-rush current limit. A voltage detect output (VDET) is used to determine
when VINT is in the correct voltage range. An open-drain fault output (FAULT) indicates
when a fault condition has occurred and an enable input (EN) controls the state of the
switch. When EN is set LOW the device enters a low-power mode, disabling all protection
circuits except the undervoltage lockout. The low-power mode can be entered at anytime
unless the over temperature protection circuit has been triggered.
Designed for operation from 3 V to 5.5 V, it is used in power domain isolation applications
to protect from out of range operation. The enable input includes integrated logic level
translation making the device compatible with lower voltage processors and controllers.
2. Features and benefits
Wide supply voltage range from 3 V to 5.5 V
30 V tolerant on VBUS
ISW maximum 1 A continuous current
Very low ON resistance: 100 m(maximum) at a supply voltage of 4.0 V
Low-power mode (ground current 20 A typical)
1.8 V control logic
Soft start turn-on slew rate
Protection circuitry
Over-temperature protection
Over-current protection with low current output mode
Reverse bias current/Back drive protection
Overvoltage lockout
Undervoltage lockout
Analog voltage limited VBUS monitor path
ESD protection:
HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2 kV
IEC61000-4-2 contact discharge exceeds 8 kV for pins VBUS, D, D+ and ID
Specified from 40 C to +85 C

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