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PDF NX2020N2 Data sheet ( Hoja de datos )
| Número de pieza | NX2020N2 | |
| Descripción | N-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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NX2020N2
30 V, N-channel Trench MOSFET
20 January 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
2. Features and benefits
• Trench MOSFET technology
• Very fast switching
• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
• Exposed drain pad for excellent thermal conduction
• Tin-plated 100 % solderable side pads for optical solder inspection
3. Applications
• Charging switch for portable devices
• DC-to-DC converters
• Power management in battery-driven portables
• Hard disk and computing power management
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; ID = 7 A; Tj = 25 °C
Min Typ Max Unit
- - 30 V
-20 -
20 V
[1] - - 10.4 A
- 16.5 19.5 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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NXP Semiconductors
NX2020N2
30 V, N-channel Trench MOSFET
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
10
0.02
0.01
0
017aaa542
1
10-3
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 017aaa543
Zth(j-a)
(K/W)
102 duty cycle = 1
0.75
0.33
0.2
10
0.5
0.25
0.1
0.05
0.02
0 0.01
1
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm2
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NX2020N2
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 January 2014
© NXP N.V. 2014. All rights reserved
5 / 15
5 Page 
NXP Semiconductors
13. Soldering
Footprint information for reflow soldering of DFN2020MD-6 package
NX2020N2
30 V, N-channel Trench MOSFET
SOT1220
0.33 (6×)
0.43 (6×)
0.53 (6×)
0.76
0.66
0.56
0.775
2.06
0.285
1.25
1.35
1.05
0.9
1.1
1.2
0.935
0.935
2.5
0.25 0.35 0.45
0.65
0.35 (6×)
0.65
0.25 (6×) 0.45 (6×)
solder land
solder land plus solder paste
solder paste deposit
occupied area
solder resist
Dimensions in mm
Fig. 19. Reflow soldering footprint for DFN2020MD-6 (SOT1220)
NX2020N2
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 January 2014
sot1220_fr
© NXP N.V. 2014. All rights reserved
11 / 15
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