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United Monolithic Semiconductors - GaAs Monolithic Microwave IC

Numéro de référence CHA7215
Description GaAs Monolithic Microwave IC
Fabricant United Monolithic Semiconductors 
Logo United Monolithic Semiconductors 





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CHA7215 fiche technique
CHA7215
RoHS COMPLIANT
X-band High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA7215 is a monolithic three-stage
GaAs high power amplifier designed for X
band applications.
The HPA provides typically 9W output power
associated to 35% power added efficiency at
4dBc and a high robustness on mismatch
load.
This device is manufactured using 0.25 µm
Power pHEMT process, including, via holes
through the substrate and air bridges.
Main Features
0.25 µm Power pHEMT Technology
Frequency band: 8.5 – 11.5GHz
Output power: 39.5dBm at saturation
High linear gain: 28dB
Power added efficiency: 34% @4dBc
Quiescent bias point: Vd=8V, Id=2.3A
Chip size: 5 x 3.31 x 0.07mm
VG1R VD1
●●
IN
VD1
VG2R VD2
●●
VD2
VG3R VD3
●●
●●
VG3R VD3
OUT
41
40,5
40
39,5
39
38,5
38
37,5
37
36,5
36
35,5
35
8
Output Power versus Frequency @Pin=19dBm
Temp=-40°C
Temp=+20°C
Temp=+80°C
8,5 9
9,5 10 10,5 11 11,5
Frequency (GHz)
12
Main Characteristics
Vd=8V, Id (Quiescent) = 2.3A, Drain Pulse width = 25µs, Duty cycle = 10%
Symbol
Parameter
Min Typ Max Unit
Top Operating temperature range
-40 +80 °C
Fop Operating frequency range
8.5 11.5 GHz
PAE_4dBc Power added efficiency @4dBc @ 20°C
34
%
Psat Saturated output power @ 20°C
39.5
dBm
G Small signal gain @ 20°C
25 28 31 dB
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
Ref : DSCHA72159287 - 14 Oct 09
1/8 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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