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GeneSiC - Single Phase Silicon Bridge Rectifier

Numéro de référence KBPC1502W
Description Single Phase Silicon Bridge Rectifier
Fabricant GeneSiC 
Logo GeneSiC 





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KBPC1502W fiche technique
Single Phase Silicon
Bridge Rectifier
Features
• High efficiency
• Silicon junction
• Metal case
• Types from 50 V to 400 V VRRM
• Not ESD Sensitive
Mechanical Data
Case: Mounted in the bridge encapsulation
Mounting position: Hole for #10 screw
Polarity: Marked on case
KBPC15005T/W thru KBPC1504T/W
VRRM = 50 V - 400 V
IO = 15 A
KBPC-T/W Package
Maximum ratings at Tc = 25 °C, unless otherwise specified (KBPCXXXXT uses KBPC-T package while KBPCXXXXW
uses KBPC-W package)
Parameter
Symbol
Conditions KBPC15005T/W KBPC1501T/W KBPC1502T/W KBPC1504T/W Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
VRRM
VRMS
VDC
Tj
Tstg
50
35
50
-55 to 150
-55 to 150
100
70
100
-55 to 150
-55 to 150
200
140
200
-55 to 150
-55 to 150
400
280
400
-55 to 150
-55 to 150
V
V
V
°C
°C
Electrical characteristics at Tc = 25 °C, unless otherwise specified
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
Parameter
Symbol
Conditions KBPC15005T/W KBPC1501T/W KBPC1502T/W KBPC1504T/W Unit
Maximum average forward rectified
current
IO
Tc = 55 °C
15
15
15
15 A
Peak forward surge current
IFSM 8.3 ms half sine-wave
300
300
300
300 A
Maximum instantaneous forward
voltage per leg
VF
IF = 7.5 A
1.1
1.1
1.1
1.1 V
Maximum DC reverse current at
rated DC blocking voltage per leg
IR
Tc = 25 °C
Tc = 100 °C
5
500
5
500
5
500
5 μA
500
Typical junction capacitance 1
Cj
300 300 300 300 pF
Thermal characteristics
Typical thermal resistance 2
RΘJC
2.3 2.3 2.3 2.3 °C/W
1 - Measured ay 1 MHz and applied reverse voltage of 4.0 V D.C.
2 - Device mounted on 300 mm x 300 mm x 1.6 mm Cu plate heatsink
www.genesicsemi.com/silicon-products/bridge-rectifiers/
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