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IPC60N04S4L-06 fiches techniques PDF

Infineon - Power-Transistor

Numéro de référence IPC60N04S4L-06
Description Power-Transistor
Fabricant Infineon 
Logo Infineon 





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IPC60N04S4L-06 fiche technique
OptiMOSTM-T2 Power-Transistor
Features
• N-channel Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• Green product (RoHS compliant)
• 100% Avalanche tested
• Feasible for automatic optical inspection (AOI)
IPC60N04S4L-06
Product Summary
VDS
RDS(on)
ID
40 V
5.6 m
60 A
PG-TDSON-8-23
1
1
Type
IPC60N04S4L-06
Package
PG-TDSON-8-23
Marking
4N04L06
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
ID
I D,pulse
E AS
I AS
V GS
T C=25°C,
T J =175°C,
V GS=10V
T C=100 °C,
T J =175°C,
V GS=10 V
T C=25 °C
I D=30 A
-
-
Power dissipation
P tot
T C=25 °C,
T J =175°C
Operating and storage temperature T j, T stg -
Value
601)
Unit
A
581, 2)
240
120
60
±16
63
-55 ... +1753)
mJ
A
V
W
°C
Rev. 1.0
page 1
2015-05-22

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