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PDF IHW30N65R5 Data sheet ( Hoja de datos )
| Número de pieza | IHW30N65R5 | |
| Descripción | IGBT | |
| Fabricantes | Infineon | |
| Logotipo |  |
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ResonantSwitchingSeries
ReverseconductingIGBTwithmonolithicbodydiode
IHW30N65R5
Datasheet
IndustrialPowerControl
1 page  
ResonantSwitchingSeries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
Integrated gate resistor
IGES
gfs
rG
VGE=0V,IC=0.20mA
VGE=15.0V,IC=30.0A
Tvj=25°C
Tvj=175°C
VGE=0V,IF=30.0A
Tvj=25°C
Tvj=175°C
IC=0.30mA,VCE=VGE
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=30.0A
IHW30N65R5
min.
Value
typ.
max. Unit
650 -
-V
- 1.35 1.70 V
- 1.60 -
- 1.70 2.10 V
- 2.00 -
3.2 4.0 4.8 V
- - 40 µA
---
- - 100 nA
- 35.0 - S
none
Ω
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=520V,IC=30.0A,
VGE=15V
LE
Value
Unit
min. typ. max.
- 3690 -
- 34 - pF
- 15 -
- 153.0 - nC
- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=400V,IC=30.0A,
VGE=0.0/15.0V,
RG(on)=13.0Ω,RG(off)=13.0Ω,
Lσ=35nH,Cσ=32pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
min.
Value
typ.
max. Unit
- 29 - ns
- 17 - ns
- 220 - ns
- 8 - ns
- 0.85 - mJ
- 0.24 - mJ
- 1.09 - mJ
5 Rev.2.1,2015-12-22
5 Page 
ResonantSwitchingSeries
IHW30N65R5
1
1
D = 0.5
D = 0.5
0.2 0.2
0.1 0.1
0.1 0.05
0.02
0.05
0.02
0.01
single pulse
0.1
0.01
single pulse
0.01
1E-6
i: 1 2 3 4 5
ri[K/W]: 1.2E-3 0.026208 0.325117 0.273429 0.185068
τi[s]: 5.0E-7 1.7E-5 1.1E-4 7.0E-4 4.5E-3
1E-5
1E-4
0.001
0.01
tp,PULSEWIDTH[s]
0.1
Figure 17. IGBTtransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
0.01
1E-6
i: 1 2 3 4 5
ri[K/W]: 1.8E-3 0.265343 0.526929 2.350517 0.280098
τi[s]: 6.0E-7 6.3E-5 4.5E-4 4.8E-3 0.02441
1E-5
1E-4 0.001
0.01
tp,PULSEWIDTH[s]
0.1
Figure 18. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
200
Tvj=25°C,IF=30A
Tvj=175°C,IF=30A
175
4.0
Tvj=25°C,IF=30A
Tvj=175°C,IF=30A
3.5
150 3.0
125 2.5
100 2.0
75 1.5
50 1.0
25 0.5
0
500
700
900
1100
1300
1500
dIF/dt,DIODECURRENTSLOPE[A/µs]
Figure 19. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V)
0.0
500
700
900
1100
1300
1500
dIF/dt,DIODECURRENTSLOPE[A/µs]
Figure 20. Typicalreverserecoverychargeasa
functionofdiodecurrentslope
(VR=400V)
11 Rev.2.1,2015-12-22
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet IHW30N65R5.PDF ] | |
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