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PDF IKW75N65ES5 Data sheet ( Hoja de datos )
| Número de pieza | IKW75N65ES5 | |
| Descripción | IGBT | |
| Fabricantes | Infineon | |
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IGBT
TRENCHSTOPTM5highSpeedsoftswitchingIGBTwithfullcurrentratedRAPID1diode
IKW75N65ES5
650VTRENCHSTOPTM5highspeedsoftswitchingduopak
Datasheet
IndustrialPowerControl
1 page  
IKW75N65ES5
TRENCHSTOPTM5softswitchingIGBT
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
IGES
gfs
VGE=0V,IC=0.20mA
VGE=15.0V,IC=75.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
VGE=0V,IF=75.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
IC=0.75mA,VCE=VGE
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=75.0A
min.
Value
typ.
max. Unit
650 -
-V
-
-
1.42 1.75
1.55 -
V
- 1.65 -
-
-
1.50 1.75
1.48 -
V
- 1.45 -
3.2 4.0 4.8 V
- - 50 µA
- 3000 -
- - 100 nA
- 100.0 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=520V,IC=75.0A,
VGE=15V
LE
min.
Value
typ.
max. Unit
- 4500 -
- 130 - pF
- 17 -
- 164.0 - nC
- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=400V,IC=75.0A,
VGE=0.0/15.0V,
RG(on)=18.0Ω,RG(off)=5.6Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Value
Unit
min. typ. max.
- 40 - ns
- 46 - ns
- 144 - ns
- 41 - ns
- 2.40 - mJ
- 0.95 - mJ
- 3.35 - mJ
5 Rev.2.1,2015-09-22
5 Page 
IKW75N65ES5
TRENCHSTOPTM5softswitchingIGBT
6
Eoff
Eon
Ets
5
4
3
2
1
7
Eoff
Eon
6 Ets
5
4
3
2
1
0
25 50 75 100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 13. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=75A,RGon=18Ω,RGoff=5.6Ω,dynamictest
circuit in Figure E)
0
200 250 300 350 400 450 500
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 14. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=0/15V,
IC=75A,RGon=18Ω,RGoff=5.6Ω,dynamictest
circuit in Figure E)
16
VCC=130V
VCC=520V
14
1E+4
Cies
Coes
Cres
12
10 1000
8
6
100
4
2
0
0 20 40 60 80 100 120 140 160 180
QGE,GATECHARGE[nC]
Figure 15. Typicalgatecharge
(IC=75A)
10
0 5 10 15 20 25 30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 16. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
11 Rev.2.1,2015-09-22
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet IKW75N65ES5.PDF ] | |
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