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Taiwan Semiconductor - Glass Passivated Bridge Rectifier

Numéro de référence ABS8-T
Description Glass Passivated Bridge Rectifier
Fabricant Taiwan Semiconductor 
Logo Taiwan Semiconductor 





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ABS8-T fiche technique
CREAT BY ART
Glass Passivated Bridge Rectifiers
FEATURES
- Glass passivated junction
- Ideal for automated placement
- Reliable low cost construction utilizing molded plastic technique
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
ABS6-T thru ABS10-T
Taiwan Semiconductor
ABS
MECHANICAL DATA
Case: Molded plastic body
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: Polarity as marked on the body
Weight: 0.12 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
Marking code
SYMBOL
ABS6-T
ABS6
ABS8-T
ABS8
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
VRRM
VRMS
VDC
600
420
600
800
560
800
Maximum average forward rectified current
On glass-epoxy
On aluminum substrate
IF(AV)
0.8
1.0
Peak forward surge current,
8.3 ms single half sine-wave
Peak forward surge current,
1.0 ms single half sine-wave
Rating for fusing (t<8.3ms)
TJ = 25
TJ = 125
TJ = 25
TJ = 125
Maximum instantaneous forward voltage (Note 1)
IF= 0.4 A
IFSM
IFSM
I2t
VF
30
25
60
50
3.74
0.95
Maximum DC reverse current
at rated DC blocking voltage
TJ=25
TJ=125
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
IR
RθJL
RθJA
TJ
TSTG
10
150
25
80
- 55 to +150
- 55 to +150
ABS10-T
ABS10
1000
700
1000
Unit
V
V
V
A
A
A
A2s
V
μA
OC/W
OC
OC
Document Number: DS_D1404019
Version: A14

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