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Taiwan Semiconductor - 1000V Glass Passivated Bridge Rectifier

Numéro de référence ABS8-K
Description 1000V Glass Passivated Bridge Rectifier
Fabricant Taiwan Semiconductor 
Logo Taiwan Semiconductor 





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ABS8-K fiche technique
ABS4-K - ABS10-K
Taiwan Semiconductor
CREAT BY ART
1A, 400V - 1000V Glass Passivated Bridge Rectifiers
FEATURES
- Glass passivated junction
- Ideal for automated placement
- Reliable low cost construction utilizing molded plastic technique
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
ABS
MECHANICAL DATA
Case: Molded plastic body
Molding compound, UL flammability classification rating 94V-0
Packing code with suffix "G" means green compound (halogen-free)
Moisture sensitivity level: level 1, per J-STD-020
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: Polarity as marked on the body
Weight: 0.12 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
Marking code
SYMBOL ABS4-K ABS6-K ABS8-K ABS10-K
ABS4
ABS6
ABS8
ABS10
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
VRRM 400 600 800 1000
VRMS 280 420 560 700
VDC 400 600 800 1000
Maximum average forward rectified current
On glass-epoxy
On aluminum substrate
IF(AV)
0.8
1.0
UNIT
V
V
V
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
IF= 0.4 A
Maximum DC reverse current
at rated DC blocking voltage
TJ=25 °C
TJ=125 °C
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
IFSM
I2t
VF
IR
RθJL
RθJA
TJ
TSTG
30
3.74
0.95
10
150
25
80
- 55 to +150
- 55 to +150
A
A2s
V
μA
°C/W
°C
°C
Document Number: DS_D0000093
Version: A15

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