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KEC - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Numéro de référence KF3N50FZ
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Fabricant KEC 
Logo KEC 





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KF3N50FZ fiche technique
SEMICONDUCTOR
TECHNICAL DATA
KF3N50FZ/FS
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
electronic ballast and switching mode power supplies.
FEATURES
VDSS= 500V, ID= 3A
Drain-Source ON Resistance : RDS(ON)=2.5
Qg(typ) = 7.50nC
(Max) @VGS = 10V
trr(typ) = 120ns (KF3N50FS)
trr(typ) = 300ns (KF3N50FZ)
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
Drain Power
Dissipation
Tc=25
Derate above 25
PD
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Tj
Tstg
Thermal Resistance, Junction-to-Case RthJC
Thermal Resistance, Junction-to-
Ambient
RthJA
* : Drain Current limited by maximum junction temperature
PIN CONNECTION
(KF3N50FZ/FS)
D
RATING
500
30
3*
1.8*
9*
110
4
10
25
0.2
150
-55 150
5.0
62.5
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
AC
E
LM
D
NN
123
R
H
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
*Single Gauge Lead Frame
TO-220IS (1)
G
S
2014. 6. 29
Revision No : 1
1/6

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