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SeCoS - Glass Passivated Bridge Rectifiers

Numéro de référence GBJ802
Description Glass Passivated Bridge Rectifiers
Fabricant SeCoS 
Logo SeCoS 





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GBJ802 fiche technique
Elektronische Bauelemente
GBJ8005 THRU GBJ810
VOLTAGE -50V~ 1000V
-8 .0 AMP Glass Passivated Bridge Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen-free.
30 ±0.3
4.6 ±0.2
3.6 ±0.2
FEATURES
* Low Forward voltage Drop, High Current Capability
* Ldeal For Printed Circuit Board
* Reliable Low Cost Construction Utilizing Molded
Plastic Technique Results In Inexpensive Product
* Plastic Material Has Underw rites Laboratory
Flammability Classification 94V-0
* Rating To 1000V PRV
+
2.5 ±0.2
2.2 ±0.2
1± 0.1
7.5 7.5
10 ±0.2 ±0.2 ±0.2
0.7 ±0.1
Dimensions in millimeters
2.7 ±0.2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25oC ambient temperature unless otherwise specified.
Resistive or inductive load, 60Hz,
For capacitive load, derate current by 20%.
TYPE NUMBER
SYMBOL
GBJ
8005
GBJ
801
GBJ
802
GBJ
804
GBJ
806
Maximum Recurrent Peak Reverse Voltage
VRRM
50 100 200 400 600
Maximum RMS Voltage
VRMS 35 70 140 280 420
Maximum DC Blocking Voltage
VDC 50 100 200 400 600
Maximum Average Forward (with heatsink Note2)
Rectified Current @ TC=100 (without heatsink)
I(AV)
8.0
2.9
Peak Forward Surge Current, 8.3 ms single
half Sine-wave superimposed
IFSM
170
on rated load (JEDEC method)
Maximum Forward Voltage at 4.0A
Maximum DC Reverse Current Ta=25oC
at Rated DC Blocking Voltage Ta=125oC
I2t Rating for fusing (t<8.3ms)
VF
IR
I2t
1.10
5.0
500
120
Typical Junction Capacitance
per element (Note1)
CJ
55
Typical Thermal Resistance (Note 2)
RθJC
1.8
Operating Temperature Range
TJ
- 55 ~ + 150
Storage Temperature Range
TSTG
- 55 ~ + 150
NOTES:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Device mounted on 75mm x 75mm x 1.6mm Cu Plate Heatsink.
GBJ
808
800
560
800
GBJ
810
1000
700
1000
UNITS
V
V
V
A
A
V
µA
A2S
pF
oC / W
oC
oC
ht t p:/ /www. SeCoSGmbH. com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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