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PDF CHT4690-99F Data sheet ( Hoja de datos )
| Número de pieza | CHT4690-99F | |
| Descripción | GaAs Monolithic Microwave IC | |
| Fabricantes | United Monolithic Semiconductors | |
| Logotipo |  |
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CHT4690-99F
RoHS COMPLIANT
5-30GHz ATTENUATOR
Description
GaAs Monolithic Microwave IC
The CHT4690 is a variable 5-30GHz
attenuator designed for a wide range of
applications, from military to commercial
communication systems. The backside of the
chip is both RF and DC grounds. This helps
simplify the assembly process.
The circuit is manufactured with a MESFET
process, 0.7µm gate length, via holes through
the substrate and air bridges.
It is supplied in chip form.
Main Features
…
…
■ Broadband performance: 5-30GHz
■ 25dBm typical input 1dB compression point
(any attenuation)
■ 30dB dynamic range
■ DC bias : -5V<V1<0V ; -5V<V2<0V
■ Chip size: 1.5x1.5x0.1mm
…
…
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Min Typ Max Unit
Fin Input frequency range
5 30 GHz
Min Att. |S21| (V1=-5V;V2=-5V) ( 5 to 12GHz)
2.5 3
dB
|S21| (V1=-5V;V2=-5V) ( 12 to 30GHz)
6.5 7.5
dB
Max Att. |S21| (V1=0V;V2=0V) (5 to 12GHz)
22 25
dB
|S21| (V1=0V;V2=0V) (12 to 30GHz)
27 34
dB
Pin1dB Input 1dB compression point
24 25
dBm
(any attenuation)
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSCHT46900211 - 30 Jul 10
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
1 page  
5-30GHz Attenuator
CHT4690-99F
Typical Results on wafer
Tamb = +25°C
Attenuation versus frequency
V1 = -5V to 0V & V2= -5V and after V1= 0V & V2 = -5V to 0V
Input Return loss versus frequency in total attenuation range
Ref. : DSCHT46900211 - 30 Jul 10
5/12
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
5 Page 
5-30GHz Attenuator
CHT4690-99F
Biasing sequence
To obtain good performances in linearity, biasing voltage should be applied as following:
- Control of 1st stage attenuation with V1 from –5V to 0V, with V2 fixed at -5V
- Control of 2nd stage with V2 from –5V to 0V, with V1 fixed at 0V
RF IN
…
…
…
…
RF OUT
V1
Chip Assembly and Mechanical Data
V2
.. ..
.. ..
120 pF
120 pF
to V1 DC gate supply feed
to V2 DC gate supply feed
Note: Supply feed might be capacitively bypassed. 25µm diameter gold wire is to be prefered.
Ref. : DSCHT46900211 - 30 Jul 10
11/12
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
11 Page | ||
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