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Numéro de référence | 1N3673A-M | ||
Description | DIODE | ||
Fabricant | DSI | ||
Logo | |||
Technical Data
DIODE
maximum ratings
Voltage, Reverse (VR)
Voltage, Reverse Peak (VRM)
Current at VR = OV (IO)
Current Average Rectified (IF)
Current Surge Peak (IZM)
Current, Surge (IFM) at tp = 8.3 ms
Max. Power Dissipation (PT) at TC = °C
Max. Thermal Resistance (Rth J-C)
Max. Junction Temperature (TJ)
1000.0 V
1000.0 V
empty
A
12.0 A
empty
A
240.0 A
empty
W
2.0 °C/W
150.0 °C
NO.
TYPE
empty
empty
CASE
empty
empty
1N3673A-M
SILICON
empty
empty
DO-4_UNF
MIL-S-19500
BURN-IN 48h/125°C
PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
C
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. IR
VR = 1000.0 V
- 50.0 µA
2. IR
VR = 1000.0 V, TJ = 125.0° C
- 1.0 mA
3. VF
IF = 12.0 A
(1) - 1.1 V
4. trr
IF = 1.0 A, VR = 30.0 V
- 5.0 µs
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
17.
18.
19.
20.
Notes
(1)pulse-tested tp ≤ 300 µs, duty cycle ≤ 2 %
empty
empty
empty
DIMENSIONS
in mm
Marking 1N3673A-M + GREEN DOT
Customer GENERAL PURPOSE
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Pages | Pages 1 | ||
Télécharger | [ 1N3673A-M ] |
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