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Numéro de référence | 1N23WE | ||
Description | DIODE | ||
Fabricant | DSI | ||
Logo | |||
Technical Data
DIODE
maximum ratings
Voltage, Reverse (VR)
Voltage, Reverse Peak (VRM)
Current at VR = OV (IO)
Current Average Rectified (IF)
Current Surge Peak (IFM)
Current, Surge (IFM) at tp =
Max. Power Dissipation (PT) at TC = °C
Max. Thermal Resistance (Rth J-A)
Max. Junction Temperature (TJ)
3.0 V
4.0 V
empty
A
0.03 A
empty
A
empty
A
empty
W
empty
°C/W
90.0 °C
NO.
TYPE
empty
empty
CASE
empty
empty
1N23WE
MICROWAVE
X-BAND
empty
DO-23
Removable Base
empty
PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
C
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. NF
f = 9.375 GHz
- 7.5 dB
2. ZIF
f = 9.375 GHz
335.0
465.0
Ω
3. VSWR
f = 9.375 GHz, Pin = 1.0 mW
- 1.3 -
4. Lc
f = 9.375 GHz, Pin = 1.0 mW
- 5.0 dB
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
17.
18.
19.
20.
Notes
empty
empty
empty
empty
DIMENSIONS
in mm
Marking 1N23WE
Customer GENERAL PURPOSE
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Pages | Pages 1 | ||
Télécharger | [ 1N23WE ] |
No | Description détaillée | Fabricant |
1N23WE | SILICON MIXER DIODE | Advanced Semiconductor |
1N23WE | DIODE | DSI |
1N23WE | Diode ( Rectifier ) | American Microsemiconductor |
1N23WG | SILICON MIXER DIODE | Advanced Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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