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Numéro de référence | 1N3317B | ||
Description | DIODE | ||
Fabricant | DSI | ||
Logo | |||
1 Page
Technical Data
DIODE
maximum ratings
Voltage, Reverse (VZ)
Voltage, Reverse Peak (VRM)
Current at VR = OV (IO)
Current Average Rectified (IZM)
Current Surge Peak (IZM)
Current, Surge (IFM) at tp =
Max. Power Dissipation (PT) at TC = 75 °C
Max. Thermal Resistance (Rth J-C)
Max. Junction Temperature (TJ)
18.0 V
empty
V
empty
A
empty
A
2.3 A
empty
A
50.0 W
2.0 °C/W
175.0 °C
NO.
TYPE
empty
empty
CASE
empty
empty
1N3317B
50W-ZENER
empty
empty
DO-5_UNF
ANODE TO CASE
empty
PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
C
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. VF
IF = 10.0 A
(1) - 1.5 V
2. VZ
IZ = 700.0 mA
17.1 18.9
V
3. IR
VR = 13.7 V
- 5.0 µA
4. RZ
IZ = 700.0 mA
- 2.0 Ω
5. RZ
IZ = 5.0 mA
- 80.0 Ω
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
17.
18.
19.
20.
Notes
(1)typical value
empty
empty
empty
DIMENSIONS
in mm
Marking 1N3317B
Customer GENERAL PURPOSE
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Pages | Pages 1 | ||
Télécharger | [ 1N3317B ] |
No | Description détaillée | Fabricant |
1N3317 | (1N3305 - 1N3350) 50W Zener Diodes | America Semiconductor |
1N3317 | Diode Zener Single 18V 20% 50W 2-Pin DO-5 | New Jersey Semiconductor |
1N3317 | Diode ( Rectifier ) | American Microsemiconductor |
1N3317A | Diode Zener Single 18V 10% 50W 2-Pin DO-5 | New Jersey Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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