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Numéro de référence | 1N1198A | ||
Description | DIODE | ||
Fabricant | DSI | ||
Logo | |||
1 Page
Technical Data
DIODE
maximum ratings
Voltage, Reverse (VR)
Voltage, Reverse Peak (VRM)
Current at VR = OV (IO)
Current Average Rectified (IF)
Current Surge Peak (IFM)
Current, Surge (IFM) at tp = 8.3 ms
Max. Power Dissipation (PT) at TC = 25 °C
Max. Thermal Resistance (Rth J-C)
Max. Junction Temperature (TJ)
600.0 V
600.0 V
empty
A
20.0 A
empty
A
350.0 A
empty
W
1.5 °C/W
200.0 °C
NO.
TYPE
empty
empty
CASE
empty
empty
1N1198A
SI - RECTIFIER
empty
empty
DO-5_UNF
CATHODE-TO-CASE
empty
PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
C
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. VF
IF = 100.0 A
(1) - 1.5 V
2. IR
VR = 600.0 V
- 30.0 µA
3. IR
VR = 600.0 V, TC = 150.0° C
- 3.0 mA
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
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20.
Notes
(1)pulse-tested tp ≤ 300 µs, duty cycle ≤ 2 %
empty
empty
empty
DIMENSIONS
in mm
Marking 1N1198A
Customer GENERAL PURPOSE
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Pages | Pages 1 | ||
Télécharger | [ 1N1198A ] |
No | Description détaillée | Fabricant |
1N1198 | SILICON POWER RECTIFIER | Microsemi Corporation |
1N1198 | Silicon Rectifier | Advanced Semiconductor |
1N1198 | Diode 600V 40A 2-Pin DO-5 | New Jersey Semiconductor |
1N1198A | Silicon Rectifier | Advanced Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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