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IPB17N25S3-100 fiches techniques PDF

Infineon - Power MOSFET ( Transistor )

Numéro de référence IPB17N25S3-100
Description Power MOSFET ( Transistor )
Fabricant Infineon 
Logo Infineon 





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IPB17N25S3-100 fiche technique
OptiMOS-T Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPB17N25S3-100
IPP17N25S3-100
Product Summary
VDS
RDS(on),max
ID
250 V
100 mΩ
17 A
PG-TO263-3-2 PG-TO220-3-1
Type
IPB17N25S3-100
IPP17N25S3-100
Package
PG-TO263-3-2
PG-TO220-3-1
Marking
3N25100
3N25100
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol
Conditions
I D T C=25 °C, V GS=10 V
T C=100°C, V GS=10V1)
Pulsed drain current1)
Avalanche energy, single pulse1)
I D,pulse
E AS
T C=25°C
I D=5.4A
Avalanche current, single pulse
I AS -
Reverse diode dv /dt
dv /dt -
Gate source voltage
Power dissipation
Operating and storage temperature
V GS
-
P tot T C=25°C
T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
17
13.3
68
54
5.4
6
±20
107
-55 ... +175
55/175/56
Unit
A
mJ
A
kV/µs
V
W
°C
Rev. 1.1
page 1
2013-05-13

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