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Número de pieza | BFP780 | |
Descripción | 200mW High Gain RF Driver Amplifier | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BFP780 (archivo pdf) en la parte inferior de esta página. Total 28 Páginas | ||
No Preview Available ! BFP780
200 mW High Gain RF Driver Amplifier
Data Sheet
Revision 3.0, 2015-07-08
RF & Protection Devices
1 page BFP780
List of Figures
List of Figures
Figure 5-1 Absolute Maximum Power Dissipation Pdiss,max vs. Ts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Figure 7-1 BFP780 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 7-2 Collector Current IC vs.VCE, IB = Parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 7-3 DC Current Gain hFE vs. IC at VCE = 5 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 7-4 Collector Emitter Breakdown Voltage BVCER vs. Resistor RBE . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 7-5 Transition Frequency fT vs. IC, VCE = Parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 7-6 Collector Base Capacitance CCB vs. IC at f = 1 GHz, VCE = Parameter . . . . . . . . . . . . . . . . . . . . . 19
Figure 7-7 Gain Gms, Gma, IS21I² vs. f at VCE = 5 V, IC = 90 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 7-8 Maximum Power Gain Gmax vs. IC at VCE = 5 V, f = Parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 7-9 Maximum Power Gain Gmax vs. VCE at IC = 90 mA, f = Parameter . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 7-10 Output Reflection Coefficient S22 vs. f at VCE = 5 V, IC = Parameter . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 7-11 Input Reflection Coefficient S11 vs. f at VCE = 5 V, IC = Parameter . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 7-12 Source Impedance ZSopt for Minimum Noise Figure vs. f at VCE = 5 V, IC = Parameter . . . . . . . . . 22
Figure 7-13 Noise Figure NFmin vs. f at VCE = 5 V, ZS = ZSopt, IC = Parameter . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 7-14 Noise Figure NFmin vs. IC at VCE = 5 V, ZS = ZSopt, f = Parameter . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 7-15 Noise Figure NF50 vs. IC at VCE = 5 V, ZS = 50 Ω, f = Parameter . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 7-16 Load Pull Contour OP1dB [dBm] at VCE = 5 V, IC = 90 mA, f = 0.9 GHz, ZI = Zopt . . . . . . . . . . . . . . 24
Figure 7-17 Load Pull Contour OIP3 [dBm] at VCE = 5 V, IC = 90 mA, f = 0.9 GHz, ZI = Zopt . . . . . . . . . . . . . . 25
Figure 7-18 Pout, Gain, IC, PAE vs. Pin at VCE = 5 V, f = 0.9 GHz, ZI = Zopt, R1 = 270 Ω, R2 = 8 kΩ. . . . . . . . . 25
Figure 9-1 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 9-2 Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 9-3 Marking Example (Marking BFP780: R1s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 9-4 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Data Sheet
5 Revision 3.0, 2015-07-08
5 Page 5 Thermal Characteristics
BFP780
Thermal Characteristics
Table 5-1 Thermal Resistance
Parameter
Symbol
Junction - soldering point RTHJS
Min.
–
Values
Typ.
95
Max.
–
Unit Note / Test Condition
K/W –
700
600
500
400
300
200
100
0
0 25 50 75 100 125 150
TS [°C]
Figure 5-1 Absolute Maximum Power Dissipation Pdiss,max vs. Ts
Note: In the horizontal part of the derating curve the maximum power dissipation is given by Pdiss,max≈VCE,max*IC,max.
In this part the junction temperature TJ is lower than TJ,max. In the declining slope it is TJ = TJ,max, Pdiss,max has
to be reduced according to the curve in order not to exceed TJ,max. It is TJ,max = TS+Pdiss,max*RTHJS.
Data Sheet
11 Revision 3.0, 2015-07-08
11 Page |
Páginas | Total 28 Páginas | |
PDF Descargar | [ Datasheet BFP780.PDF ] |
Número de pieza | Descripción | Fabricantes |
BFP780 | 200mW High Gain RF Driver Amplifier | Infineon |
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