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Numéro de référence | UT3414 | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | Unisonic Technologies | ||
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1 Page
UNISONIC TECHNOLOGIES CO., LTD
UT3414
N-CHANNEL ENHANCEMENT
MODE
DESCRIPTION
The UT3414 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate voltages
as low as 1.8V. This device is suitable for use as a load switch or in
PWM applications.
FEATURES
* RDS(ON) < 50mΩ @VGS = 4.5V
* RDS(ON) < 63mΩ @VGS = 2.5V
* RDS(ON) < 87mΩ @VGS = 1.8V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
UT3414G-AE3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
SOT-23
Pin Assignment
123
SGD
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-248.F
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Pages | Pages 4 | ||
Télécharger | [ UT3414 ] |
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