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PDF 2N7002DW Data sheet ( Hoja de datos )
| Número de pieza | 2N7002DW | |
| Descripción | DUAL N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UNISONIC TECHNOLOGIES CO., LTD
2N7002DW
300mA, 60V DUAL
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N7002DW uses advanced technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATURES
* High Density Cell Design for Low RDS(ON).
* Voltage Controlled Small Signal Switch
* Rugged and Reliable
* High Saturation Current Capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Package
2N7002DWG-AL6-R
SOT-363
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123456
S1 G1 D2 S2 G2 D1
Packing
Tape Reel
MARKING
3PG
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R502-534.D
1 page  
2N7002DW
TYPICAL CHARACTERICS (Cont.)
1.1
1.075
Breakdown Voltage Varisation
with Temperature
ID = 250μA
1.05
1.025
1
0.975
0.95
0.925
-50
-25 0 25 50 75 100 125 150
Junction Temperature, TJ (°C)
Power MOSFET
Body Diode Forward Voltage Varisation
with Temperature
2
1 VGS=0V
0.5
TJ =125°C
0.1
25°C
0.05
0.01
0.005
0.001
0.2
0.4 0.6 0.8
1 1.2 1.4
Body Diode Forward Voltage, VSD (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2N7002DW.PDF ] | |
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