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PDF 4N50 Data sheet ( Hoja de datos )
| Número de pieza | 4N50 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UNISONIC TECHNOLOGIES CO., LTD
4N50
4 A, 500 V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 4N50 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 4N50 is generally applied in high efficiency switch mode
power supplies, active power factor correction and electronic lamp
ballasts based on half bridge topology.
FEATURES
* ID= 4A
* VDS=500V
* RDS(ON)=2.0Ω @ VGS=10V
* High Switching Speed
* 100% Avalanche Tested
1
1
1
Power MOSFET
1
TO-252
TO-251
TO-220
TO-220F
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
4N50L-TA3-T
4N50G-TA3-T
4N50L-TF3-T
4N50G-TF3-T
4N50L-TM3-T
4N50G-TM3-T
4N50L-TN3-R
4N50G-TN3-R
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F
TO-251
TO-252
Pin Assignment
123
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-525.E
1 page  
4N50
TEST CIRCUITS AND WAVEFORMS(Cont.)
D.U.T.
+
-
+
VDS
-
L
Power MOSFET
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
VDD
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-525.E
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 4N50.PDF ] | |
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