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PDF 50N06-F Data sheet ( Hoja de datos )
| Número de pieza | 50N06-F | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UNISONIC TECHNOLOGIES CO., LTD
50N06-F
Preliminary
50 Amps, 60 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 50N06-F is three-terminal silicon device with current
conduction capability of about 50A, fast switching speed. Low
on-state resistance, breakdown voltage rating of 60V, and max
threshold voltages of 4 volt.
It is mainly suitable electronic ballast, and low power switching
mode power appliances.
FEATURES
* RDS(ON) < 23mΩ@VGS = 10 V
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
50N06L-TN3-R
50N06G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-252
Pin Assignment
123
GDS
Packing
Tape Reel
MARKING INFORMATION
PACKAGE
TO-252
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
MARKING
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50N06-F
Preliminary
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
10V
RG
tp
L
VDS
BVDSS
IAS
VDD
D.U.T.
VDD
ID(t)
tp
VDS(t)
Time
Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 50N06-F.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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