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PDF K3365 Data sheet ( Hoja de datos )
| Número de pieza | K3365 | |
| Descripción | MOSFET ( Transistor ) - 2SK3365 | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3365
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3365 is N-Channel MOS Field Effect Transistor
designed for DC/DC converters application of notebook
computers.
FEATURES
• Low on-resistance
RDS(on)1 = 14 mΩ (MAX.) (VGS = 10 V, ID = 15 A)
RDS(on)2 = 21 mΩ (MAX.) (VGS = 4.5 V, ID = 15 A)
RDS(on)3 = 29 mΩ (MAX.) (VGS = 4.0 V, ID = 15 A)
• Low Ciss : Ciss = 1300 pF (TYP.)
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3365
TO-251
2SK3365-Z
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC)
Drain Current (Pulse) Note
ID(DC)
ID(pulse)
±30
±120
Total Power Dissipation (TC = 25 °C) PT 36
Total Power Dissipation (TA = 25 °C) PT 1.0
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to + 150
V
V
A
A
W
W
°C
°C
Note PW ≤ 10 µs, Duty cycle ≤ 1 %
THERMAL RESISTANCE
Channel to case
Channel to ambient
Rth(ch-C)
Rth(ch-A)
3.48 °C/W
125 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14255EJ1V0DS00 (1st edition)
Date Published September 1999 NS CP(K)
Printed in Japan
©
1999
1 page  
2SK3365
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
30
VGS = 4.0 V
4.5 V
20
10 V
10
0 ID = 15 A
− 50 0
50 100 150
Tch - Channel Temperature - ˚C
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
1000
Ciss
100
0.01
Coss
Crss
0.1 1 10 100
VDS - Drain to Source Voltage - V
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1 1 10 100
IF - Diode Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100 VGS = 10 V
Pulsed
0V
10
1
0.1
0.01
0
0.4 0.8 1.2 1.6
VSD - Source to Drain Voltage - V
1000
100
SWITCHING CHARACTERISTICS
tr
tf
td(on)
td(off)
10
1
0.1
VDD = 15 V
VGS = 10 V
RG = 10 Ω
1 10 100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
ID = 30 A
14
30 12
VDD = 24 V
20
15 V
6V
VGS
10
VDS
10
8
6
4
2
0
0 10 20 30 40
QG - Gate Charge - nC
Data Sheet D14255EJ1V0DS00
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K3365.PDF ] | |
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