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PDF PESD5V0V4UK Data sheet ( Hoja de datos )
| Número de pieza | PESD5V0V4UK | |
| Descripción | Very low capacitance unidirectional quadruple ESD protection diode arrays | |
| Fabricantes | NXP Semiconductors | |
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PESD3V3V4UK;
PESD5V0V4UK; PESD9V0V4UK
Very low capacitance unidirectional quadruple ESD protection
diode arrays
Rev. 1 — 25 August 2010
Product data sheet
1. Product profile
1.1 General description
Very low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection
diode arrays in a leadless ultra small SOT891 Surface-Mounted Device (SMD) plastic
package designed to protect up to four unidirectional signal lines from the damage caused
by ESD and other transients.
1.2 Features and benefits
ESD protection of up to four lines
Very low diode capacitance
Max. peak pulse power: PPP = 28 W
Low clamping voltage: VCL = 9.5 V
AEC-Q101 qualified
Very low leakage current: IRM = 0.1 μA
ESD protection up to 15 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); IPP = 2.7 A
1.3 Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
Communication systems
Portable electronics
Subscriber Identity Module (SIM) card
protection
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
reverse standoff voltage
PESD3V3V4UK
PESD5V0V4UK
PESD9V0V4UK
Min Typ Max Unit
- - 3.3 V
- - 5.0 V
- - 9.0 V
1 page  
NXP Semiconductors
PESDxV4UK series
Very low capacitance unidirectional quadruple ESD protection arrays
6. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
reverse standoff voltage
PESD3V3V4UK
PESD5V0V4UK
PESD9V0V4UK
IRM reverse leakage current
PESD3V3V4UK
VRWM = 3.3 V
PESD5V0V4UK
VRWM = 5.0 V
PESD9V0V4UK
VRWM = 9.0 V
VBR breakdown voltage
IR = 1 mA
PESD3V3V4UK
PESD5V0V4UK
PESD9V0V4UK
Cd diode capacitance
PESD3V3V4UK
f = 1 MHz;
VR = 0 V
PESD5V0V4UK
PESD9V0V4UK
VCL clamping voltage
PESD3V3V4UK
IPP = 2.6 A
PESD5V0V4UK
IPP = 2.4 A
PESD9V0V4UK
IPP = 1.5 A
rdif differential resistance IR = 5 mA
PESD3V3V4UK
PESD5V0V4UK
PESD9V0V4UK
Min Typ Max Unit
- - 3.3 V
- - 5.0 V
- - 9.0 V
-
0.13 1
μA
- 0.05 0.3 μA
- 0.003 0.1 μA
5.3 5.6
6.47 6.8
11.4 12
5.9 V
7.14 V
12.7 V
-
-
-
[1][2]
-
-
-
-
-
-
13 17
12.5 15
6.5 10
pF
pF
pF
- 9.5 V
- 10 V
- 19 V
5 16
2.5 8
10 30
Ω
Ω
Ω
[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1, 3, 4 or 6 to pin 2.
PESDXV4UK_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 August 2010
© NXP B.V. 2010. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
11. Soldering
PESDxV4UK series
Very low capacitance unidirectional quadruple ESD protection arrays
1.05
1.4 0.7
0.5 0.6
(6×) (6×)
solder resist
solder land plus
solder paste
occupied area
Dimensions in mm
0.15
(6×)
0.25
(6×)
0.35
Reflow soldering is the only recommended soldering method.
Fig 12. Reflow soldering footprint SOT891
sot891_fr
PESDXV4UK_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 August 2010
© NXP B.V. 2010. All rights reserved.
11 of 15
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet PESD5V0V4UK.PDF ] | |
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