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NXP Semiconductors - Unidirectional quadruple ESD protection diode arrays

Numéro de référence PESD5V0S4UF
Description Unidirectional quadruple ESD protection diode arrays
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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PESD5V0S4UF fiche technique
PESD3V3S4UF; PESD5V0S4UF
Unidirectional quadruple ESD protection diode arrays
Rev. 01 — 17 January 2008
Product data sheet
1. Product profile
1.1 General description
Unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in a small
SOT886 Surface-Mounted Device (SMD) plastic package designed to protect up to four
signal lines from the damage caused by ESD and other transients.
1.2 Features
I ESD protection of up to four lines
I Max. peak pulse power: PPP = 110 W
I Low clamping voltage: VCL = 11 V
I Ultra low leakage current: IRM = 4 nA
I ESD protection up to 30 kV
I IEC 61000-4-2; level 4 (ESD)
I IEC 61000-4-5 (surge); IPP = 10 A
I AEC-Q101 qualified
1.3 Applications
I Computers and peripherals
I Audio and video equipment
I Cellular handsets and accessories
I Communication systems
I Portable electronics
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
reverse standoff voltage
PESD3V3S4UF
PESD5V0S4UF
Cd diode capacitance
PESD3V3S4UF
f = 1 MHz; VR = 0 V
PESD5V0S4UF
Min Typ Max Unit
- - 3.3 V
- - 5.0 V
- 110 300 pF
- 85 220 pF

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