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PDF UP9T15G Data sheet ( Hoja de datos )
| Número de pieza | UP9T15G | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UNISONIC TECHNOLOGIES CO., LTD
UP9T15G
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
DESCRIPTION
The UP9T15G uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
FEATURES
* VDS(V)=20V
* ID=12 .5A (VGS=4.5V)
* RDS(ON) < 50mΩ @ VGS =4.5 V, ID =6 A
* RDS(ON) < 80mΩ @ VGS =2.5 V, ID =5.2 A
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UP9T15GL-TN3-R
UP9T15GP-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-252
Pin Assignment
123
GD S
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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UP9T15G
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet UP9T15G.PDF ] | |
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