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PDF IPA083N10N5 Data sheet ( Hoja de datos )

Número de pieza IPA083N10N5
Descripción MOSFET ( Transistor )
Fabricantes Infineon 
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No Preview Available ! IPA083N10N5 Hoja de datos, Descripción, Manual

MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSª5Power-Transistor,100V
IPA083N10N5
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket

1 page




IPA083N10N5 pdf
OptiMOSª5Power-Transistor,100V
IPA083N10N5
Table5Dynamiccharacteristics1)
Parameter
Symbol
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Ciss
Coss
Crss
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
-
-
-
-
-
-
-
Values
Typ. Max.
2100 2730
337 438
16 28
15 -
5-
24 -
5-
Unit Note/TestCondition
pF VGS=0V,VDS=50V,f=1MHz
pF VGS=0V,VDS=50V,f=1MHz
pF VGS=0V,VDS=50V,f=1MHz
ns
VDD=50V,VGS=10V,ID=44A,
RG,ext=1.6
ns
VDD=50V,VGS=10V,ID=44A,
RG,ext=1.6
ns
VDD=50V,VGS=10V,ID=44A,
RG,ext=1.6
ns
VDD=50V,VGS=10V,ID=44A,
RG,ext=1.6
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate to drain charge1)
Switching charge
Gate charge total1)
Gate plateau voltage
Output charge1)
Qgs
Qgd
Qsw
Qg
Vplateau
Qoss
Min.
-
-
-
-
-
-
Values
Typ. Max.
10 -
6 10
10 -
30 37
4.8 -
40 53
Unit Note/TestCondition
nC VDD=50V,ID=44A,VGS=0to10V
nC VDD=50V,ID=44A,VGS=0to10V
nC VDD=50V,ID=44A,VGS=0to10V
nC VDD=50V,ID=44A,VGS=0to10V
V VDD=50V,ID=44A,VGS=0to10V
nC VDD=50V,VGS=0V
Table7Reversediode
Parameter
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time1)
Reverse recovery charge1)
Symbol
IS
IS,pulse
VSD
trr
Qrr
Min.
-
-
-
-
-
Values
Typ. Max.
- 30
- 176
0.9 1.2
55 110
95 190
Unit Note/TestCondition
A TC=25°C
A TC=25°C
V VGS=0V,IF=44A,Tj=25°C
ns VR=50V,IF=IS,diF/dt=100A/µs
nC VR=50V,IF=IS,diF/dt=100A/µs
1) Defined by design. Not subject to production test.
2) See Gate charge waveformsfor parameter definition
Final Data Sheet
5
Rev.2.0,2014-12-18

5 Page





IPA083N10N5 arduino
OptiMOSª5Power-Transistor,100V
IPA083N10N5
RevisionHistory
IPA083N10N5
Revision:2014-12-18,Rev.2.0
Previous Revision
Revision Date
2.0 2014-12-18
Subjects (major changes since last revision)
Release of final version
WeListentoYourComments
Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously
improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:
Publishedby
InfineonTechnologiesAG
81726München,Germany
©2014InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
11 Rev.2.0,2014-12-18

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