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PDF IDW20C65D2 Data sheet ( Hoja de datos )

Número de pieza IDW20C65D2
Descripción Diode ( Rectifier )
Fabricantes Infineon 
Logotipo Infineon Logotipo



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No Preview Available ! IDW20C65D2 Hoja de datos, Descripción, Manual

Diode
RapidSwitchingEmitterControlledDiode
IDW20C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
Datasheet
IndustrialPowerControl

1 page




IDW20C65D2 pdf
IDW20C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
Switching Characteristics (per leg), Inductive Load
Parameter
Symbol Conditions
Diode Characteristic, at Tvj = 25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=25°C,
VR=400V,
IF=10.0A,
diF/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IGW50N65H5.
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=25°C,
VR=400V,
IF=10.0A,
diF/dt=350A/µs,
Lσ=30nH,
Cσ=40pF,
switch IGW50N65H5.
Value
Unit
min. typ. max.
- 30 - ns
- 0.16 - µC
- 8.6 - A
- -740 - A/µs
- 50 - ns
- 0.13 - µC
- 4.3 - A
- -130 - A/µs
Switching Characteristics (per leg), Inductive Load
Parameter
Symbol Conditions
Diode Characteristic, at Tvj = 175°C/125°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=175°C,
VR=400V,
IF=10.0A,
diF/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IGW50N65H5.
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=125°C,
VR=400V,
IF=10.0A,
diF/dt=350A/µs,
Lσ=30nH,
Cσ=40pF,
switch IGW50N65H5.
Value
Unit
min. typ. max.
- 36 - ns
- 0.23 - µC
- 10.6 - A
- -680 - A/µs
- 54 - ns
- 0.16 - µC
- 5.0 - A
- -190 - A/µs
5 Rev.2.1,2014-12-09

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