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Numéro de référence | IRGB6B60KPbF | ||
Description | Insulated Gate Bipolar Transistor | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
INSULATED GATE BIPOLAR TRANSISTOR
PD - 95644A
IRGB6B60KPbF
IRGS6B60KPbF
IRGSL6B60KPbF
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free.
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
C
G
E
n-channel
VCES = 600V
IC = 7.0A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.8V
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
TO-220AB
D2Pak
IRGB6B60K IRGS6B60K
TO-262
IRGSL6B60K
Max.
600
13
7.0
26
26
± 20
90
36
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
0.50
–––
–––
1.44
Max.
1.4
–––
62
40
–––
Units
°C/W
g
1
11/18/04
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Pages | Pages 14 | ||
Télécharger | [ IRGB6B60KPbF ] |
No | Description détaillée | Fabricant |
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