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PDF IRGB4715DPbF Data sheet ( Hoja de datos )
| Número de pieza | IRGB4715DPbF | |
| Descripción | Insulated Gate Bipolar Transistor | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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VCES = 650V
IC = 15A, TC =100°C
tSC 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 8A
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
Features
Low VCE(ON) and Switching Losses
5.5µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
Lead-Free, RoHs compliant
IRGB4715DPbF
IRGS4715DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C C
G
E
n-channel
G CE
IRGS4715DPbF
D2‐Pak
E
C
G
IRGB4715DPbF
TO‐220AB
G
Gate
C
Collector
E
Emitter
Benefits
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Environmentally friendly
Base part number Package Type
Standard Pack
Orderable Part Number
IRGB4715DPbF
IRGS4715DPbF
TO-220
D2-Pak
Form
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Quantity
50
50
800
800
IRGB4715DPbF
IRGS4715DPbF
IRGS4715DTRLPbF
IRGS4715DTRRPbF
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
650
21
15
24
32
21
13
32
±30
100
50
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
C
Thermal Resistance
Parameter
RJC (IGBT)
RJC (Diode)
RCS
RJA
RJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (TO-220)
Thermal Resistance, Junction-to-Ambient (D2-Pak)
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.5
–––
–––
Max.
1.5
3.6
–––
62
40
Units
°C/W
1 www.irf.com © 2014 International Rectifier
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November 12, 2014
1 page  
8
6
4
ICE = 4A
ICE = 8A
ICE = 16A
2
0
5
1000
10 15
VGE (V)
20
Fig. 12 - Typical VCE vs. VGE
TJ = 175°C
800
600 EON
400
EOFF
200
0
0 2 4 6 8 10 12 14 16
IC (A)
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 175°C; VCE = 400V, RG = 50; VGE = 15V
600
500
400
EON
300
200 EOFF
100
0
0 20 40 60 80 100
Rg ()
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 175°C; VCE = 400V, ICE = 8A; VGE = 15V
5 www.irf.com © 2013 International Rectifier
IRGB4715DPBF/IRGS4715DPBF
32
TJ = 25°C
24 TJ = 175°C
16
8
0
6 7 8 9 10 11 12 13 14 15 16
VGE (V)
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
1000
100 tdOFF
tF
tdON
10 tR
1
0 2 4 6 8 10 12 14 16
IC (A)
Fig. 15 - Typ. Switching Time vs. IC
TJ = 175°C; VCE = 400V, RG = 50; VGE = 15V
1000
100
tdON
10 tR
tdOFF
tF
1
0 20 40 60 80 100
RG ()
Fig. 17 - Typ. Switching Time vs. RG
TJ = 175°C; VCE = 400V, ICE = 8A; VGE = 15V
Submit Datasheet Feedback
November 12, 2014
5 Page 
IRGB4715DPBF/IRGS4715DPBF
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
D2Pak (TO-263AB) Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
F530S
PART NUMBER
DATE CODE
YEAR 0 = 2000
WEEK 02
LINE L
OR
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
F530S
PART NUMBER
DATE CODE
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
YEAR 0 = 2000
WEEK 02
A = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 www.irf.com © 2013 International Rectifier
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November 12, 2014
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IRGB4715DPbF.PDF ] | |
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