|
|
Numéro de référence | IRGR3B60KD2PBF | ||
Description | Insulated Gate Bipolar Transistor | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
PD - 95036
IRGR3B60KD2PbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free
Benefits
• Benchmark Efficiency for Motor Control.
C
G
E
n-channel
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
VCES = 600V
IC = 4.2A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.9V
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
cICM Pulse Collector Current (Ref.Fig.C.T.5)
ILM Clamped Inductive Load current
IF @ Tc = 25°C Diode Continous Forward Current
IF @ Tc = 100°C Diode Continuous Forward Current
IFM Diode Maximum Forward Current
VGE Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature Range, for 10 sec.
Thermal / Mechanical Characteristics
Parameter
RθJC Junction-to-Case- IGBT
RθJC Junction-to-Case- Diode
dRθJA Junction-to-Ambient, (PCB Mount)
Wt Weight
www.irf.com
D-Pak
Max.
600
7.8
4.2
15.6
15.6
6.0
3.2
15.6
±20
52
21
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
Typ.
–––
–––
–––
0.3
Max.
2.4
8.8
50
–––
Units
°C/W
g
1
2/23/04
|
|||
Pages | Pages 14 | ||
Télécharger | [ IRGR3B60KD2PBF ] |
No | Description détaillée | Fabricant |
IRGR3B60KD2PBF | Insulated Gate Bipolar Transistor | International Rectifier |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |