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PDF IRGPS60B120KDP Data sheet ( Hoja de datos )
| Número de pieza | IRGPS60B120KDP | |
| Descripción | Insulated Gate Bipolar Transistor | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD- 95913
IRGPS60B120KDP
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Motor Control Co-Pack IGBT
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Super-247 Package.
• Lead-Free
C
G
E
N-channel
VCES = 1200V
VCE(on) typ. = 2.50V
@ VGE = 15V,
ICE = 60A, Tj=25°C
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Le
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Internal Emitter Inductance (5mm from package)
www.irf.com
Super-247™
Max.
1200
105
60
240
240
120
60
240
± 20
595
238
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
20 (2)
–––
–––
Typ.
–––
–––
0.24
–––
–––
6.0 (0.21)
13
Max.
0.20
0.41
–––
40
–––
–––
–––
Units
°C/W
N(kgf)
g (oz)
nH
1
9/22/04
1 page  
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 30A
ICE = 60A
ICE = 120A
10 15
VGE (V)
20
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
IRGPS60B120KDP
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 30A
ICE = 60A
ICE = 120A
10 15
VGE (V)
20
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
20
18
16
14
12
10
8
6
4
2
5
ICE = 30A
ICE = 60A
ICE = 120A
10 15
VGE (V)
20
Fig. 11 - Typical VCE vs. VGE
TJ = 125°C
www.irf.com
500
450 TJ = 25°C
400 TJ = 125°C
350
300
250
200
150
100 TJ = 125°C
50
0
05
TJ = 25°C
10
VGE (V)
15
20
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
5
5 Page 
Fig. WF1 - Typ. Turn-off Loss Waveform
@ Tj=125°C using Fig. CT.4
900
800
700
600
500
400
300
200
100
0
-100
-0.50
90% ICE
tr
5% VCE
5% ICE
Eof f Loss
0.50 1.50
Time (µs)
90
80
70
60
50
40
30
20
10
0
-10
2.50
Fig. WF.3 - Typ. Diode Recovery
W aveform
@ Tj=125°C using Fig. CT.4
400 80
200
0
-200
QRR
tRR
60
40
20
-400
-600
-800
Peak
IRR
0
10%
Peak
IRR
-20
-40
-1000
-0.25
www.irf.com
0.25
time (µS)
0.75
-60
IRGPS60B120KDP
Fig. WF2 - Typ. Turn-On Loss Waveform
@ Tj=125°C using Fig. CT.4
800
700
600
500
400
300
200
100
0
-100
4.10
120
105
TEST CURRENT 90
75
90% test current
60
45
tr 10% test current
30
5% VCE
15
Eon Loss
4.30 4.50
Time (µs)
0
-15
4.70
Fig. WF.4 - Typ. S.C. Waveform
@ TC=150°C using Fig. CT.3
1000
500
900 450
VCE
800 400
700 350
600 ICE 300
500 250
400 200
300 150
200 100
100 50
00
-5.00 0.00 5.00 10.00 15.00
time (µS)
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IRGPS60B120KDP.PDF ] | |
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