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IRGP6650D-EPbF fiches techniques PDF

International Rectifier - Insulated Gate Bipolar Transistor

Numéro de référence IRGP6650D-EPbF
Description Insulated Gate Bipolar Transistor
Fabricant International Rectifier 
Logo International Rectifier 





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IRGP6650D-EPbF fiche technique
 
VCES = 600V
IC = 50A, TC =100°C
IRGP6650DPbF
IRGP6650D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
  C  C
C
tSC 5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.65V @ IC = 35A
Applications
 Welding
 H Bridge Converters
G
E
n-channel
G
Gate
E
C
G
IRGP6650DPbF 
TO247AC 
C
Collector
GCE
IRGP6650DEPbF 
TO247AD 
E
Emitter
Features
Low VCE(ON) and Switching Losses
Optimized Diode for Full Bridge Hard Switch Converters
Square RBSOA and Maximum Temperature of 175°C
5µs Short Circuit
Positive VCE (ON) Temperature Co-efficient
Lead-free, RoHS compliant
Benefits
High Efficiency in a Wide Range of Applications
Optimized for Welding and H Bridge Converters
Improved Reliability due to Rugged Hard Switching
Performance and High Power Capability
Enables Short Circuit Protection Operation
Excellent Current Sharing in Parallel Operation
Environmentally friendly
Base part number
IRGP6650DPbF
IRGP6650D-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP6650DPbF
IRGP6650D-EPbF
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
IFRM @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Diode Repetitive Peak Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
600
80
50
105
140
25
140
±20
306
153
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C  
 
Thermal Resistance
Parameter
RJC (IGBT)
RJC (Diode)
RCS
RJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.49
3.35
–––
40
Units
°C/W
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November 14, 2014

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