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Elite Semiconductor - 1 Gbit (128M x 8) 3.3V NAND Flash Memory

Numéro de référence F59L1G81A
Description 1 Gbit (128M x 8) 3.3V NAND Flash Memory
Fabricant Elite Semiconductor 
Logo Elite Semiconductor 





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F59L1G81A fiche technique
ESMT
Flash
FEATURES
z Voltage Supply: 2.6V ~ 3.6V
z Organization
- Memory Cell Array: (128M + 4M) x 8bit
- Data Register: (2K + 64) x 8bit
z Automatic Program and Erase
- Page Program: (2K + 64) bytes
- Block Erase: (128K + 4K) bytes
z Page Read Operation
- Page Size: (2K + 64) bytes
- Random Read: 25us (Max.)
- Serial Access: 25ns (Min.)
z Memory Cell: 1bit/Memory Cell
z Fast Write Cycle Time
- Program time: 200us (Typ.)
- Block Erase time: 1.5ms (Typ.)
z Command/Address/Data Multiplexed I/O Port
z Hardware Data Protection
- Program/Erase Lockout During Power Transitions
z Reliable CMOS Floating Gate Technology
z Endurance:
- 100K Program/Erase Cycles (with 1 bit/528 bytes ECC)
- Data Retention: 10 Years
z Command Driven Operation
z Cache Program Operation for High Performance Program
z Copy-Back Operation
z No Bad-Block-Erasing-Protect function (user should manage
bad blocks before erasing)
F59L1G81A
1 Gbit (128M x 8)
3.3V NAND Flash Memory
ORDERING INFORMATION
Product ID
Speed
Package
F59L1G81A -25TG
25 ns
48 pin TSOPI
F59L1G81A -25BG
25 ns
63 ball BGA
Comments
Pb-free
Pb-free
GENERAL DESCRIPTION
Offered in 128Mx8 bits, this device is 1Gbit with spare 32Mbit
capacity. The device is offered in 3.3V VCC. Its NAND cell
provides the most cost effective solution for the solid state mass
storage market. A program operation can be performed in typical
200us on the 2,112-byte page and an erase operation can be
performed in typical 1.5ms on a (128K+4K) bytes block. Data in
the data register can be read out at 25ns cycle time per byte.
The I/O pins serve as the ports for address and data input/output
as well as command input. The on-chip write controller
automates all program and erase functions including pulse
repetition, where required, and internal verification and
margining of data. Even the write-intensive systems can take
advantage of this device’s extended reliability of 100K
program/erase cycles by providing ECC (Error Correcting Code)
with real time mapping-out algorithm.
This device is an optimum solution for large nonvolatile storage
applications such as solid state file storage and other portable
applications requiring non-volatility.
Elite Semiconductor Memory Technology Inc.
Publication Date: Oct. 2013
Revision: 1.2
1/35

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