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Numéro de référence | FDD86102 | ||
Description | MOSFET ( Transistor ) | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
FDD86102
N-Channel PowerTrench® MOSFET
100 V, 36 A, 24 mΩ
Features
General Description
March 2012
Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8 A
Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 6 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used
surface mount package
Very low Qg and Qgd compared to competing trench
technologies
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been optimized for rDS(on), switching performance and
ruggedness.
Application
DC - DC Conversion
Fast switching speed
100% UIL tested
RoHS Compliant
D
G
S
D
DT O-P-2A5K2
(T O -25 2)
G
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
36
8
40
121
62
3.1
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
2.0
40
°C/W
Device Marking
FDD86102
Device
FDD86102
Package
D-PAK(TO-252)
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2012 Fairchild Semiconductor Corporation
FDD86102 Rev.C5
1
www.fairchildsemi.com
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Pages | Pages 6 | ||
Télécharger | [ FDD86102 ] |
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