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PDF FDB86563_F085 Data sheet ( Hoja de datos )
| Número de pieza | FDB86563_F085 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
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FDB86563_F085
N-Channel PowerTrench® MOSFET
60 V, 110 A, 1.8 mΩ
December
2014
Features
Typical RDS(on) = 1.6 mΩ at VGS = 10V, ID = 80 A
Typical Qg(tot) = 126 nC at VGS = 10V, ID = 80 A
UIS Capability
RoHS Compliant
Qualified to AEC Q101
Applications
Automotive Engine Control
PowerTrain Management
Solenoid and Motor Drivers
Integrated Starter/Alternator
Primary Switch for 12V Systems
DD
GS
TO-263
FDB SERIES
G
S
For current package drawing, please refer to the Fairchild web‐
site at https://www.fairchildsemi.com/package‐drawings/TO/
TO263A02.pdf
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
VGS
ID
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
EAS Single Pulse Avalanche Energy
PD
Power Dissipation
Derate Above 25oC
TJ, TSTG
RθJC
RθJA
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
TC = 25°C
TC = 25°C
(Note 2)
(Note 3)
Ratings
60
±20
110
See Figure 4
614
333
2.22
-55 to + 175
0.45
43
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 0.3mH, IAS = 64A, VDD = 60V during inductor charging and VDD = 0V during time in avalanche.
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface
presented here is
of the
based
drain pins. RθJC is
on mounting on a 1
guaranteed by design,
in2 pad of 2oz copper.
while
RθJAis
determined
by
the
board
design.
The maximum rating
Package Marking and Ordering Information
Device Marking
FDB86563
Device
FDB86563_F085
Package
D2-PAK(TO-263)
Reel Size
330mm
Tape Width
24mm
Quantity
800units
©2014 Fairchild Semiconductor Corporation
FDB86563_F085 Rev. C1
1
www.fairchildsemi.com
1 page  
Typical Characteristics
40
ID = 80A
30
TJ = 175oC
20
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
TJ = 25oC
10
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 11. RDSON vs. Gate Voltage
10
2.0
PULSE DURATION = 80μs
1.8 DUTY CYCLE = 0.5% MAX
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-80
ID = 80A
VGS = 10V
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 12. Normalized RDSON vs. Junction
Temperature
1.4
VGS = VDS
1.2 ID = 250μA
1.0
0.8
0.6
0.4
0.2
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 13. Normalized Gate Threshold Voltage vs.
Temperature
1.10
ID = 1mA
1.05
1.00
0.95
0.90
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
100000
10000
Ciss
1000
Coss
Crss
100
f = 1MHz
VGS = 0V
10
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 15. Capacitance vs. Drain to Source
Voltage
10
ID = 80A
8
6
VDD =24V
VDD = 30V
VDD = 36V
4
2
0
0 25 50 75 100 125
Qg, GATE CHARGE(nC)
Figure 16. Gate Charge vs. Gate to Source
Voltage
FDB86563_F085 Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDB86563_F085.PDF ] | |
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