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Fairchild Semiconductor - N-Channel SupreMOS MOSFET

Numéro de référence FCPF36N60NT
Description N-Channel SupreMOS MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FCPF36N60NT fiche technique
FCP36N60N / FCPF36N60NT
N-Channel SupreMOS® MOSFET
600 V, 36 A, 90 mΩ
December 2013
Features
• RDS(on) = 81 mΩ (Typ.) @ VGS = 10 V, ID = 18 A
• Ultra Low Gate Charge (Typ. Qg = 86 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 361 pF)
• 100% Avalanche Tested
• RoHS Compliant
Application
• Solar Inverter
• AC-DC Power Supply
Description
The SupreMOS® MOSFET is Fairchild Semiconductor’s next
generation of high voltage super-junction (SJ) technology
employing a deep trench filling process that differentiates it from
the conventional SJ MOSFETs. This advanced technology and
precise process control provides lowest Rsp on-resistance,
superior switching performance and ruggedness. SupreMOS
MOSFET is suitable for high frequency switching power con-
verter applications such as PFC, server/telecom power, FPD TV
power, ATX power, and industrial power applications.
D
GDS
TO-220
GDS
TO-220F
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.
S
FCP36N60N FCPF36N60NT
600
±30
36 36*
22.7 22.7*
108 108*
1800
12
3.12
100
20
312
2.6
-55 to +150
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
300 oC
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Case to Heat Sink, Typ.
Thermal Resistance, Junction to Ambient, Max.
FCP36N60N
0.4
0.5
62.5
FCPF36N60NT
3.5
0.5
62.5
Unit
oC/W
©2010 Fairchild Semiconductor Corporation
FCP36N60N / FCPF36N60NT Rev. C2
1
www.fairchildsemi.com

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