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PDF FCP104N60F Data sheet ( Hoja de datos )
| Número de pieza | FCP104N60F | |
| Descripción | N-Channel SuperFET ll FRFET MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FCP104N60F
N-Channel SuperFET® ll FRFET® MOSFET
600 V, 37 A, 104 mΩ
December 2014
Features
• 650 V @ TJ = 150°C
• Typ. RDS(on) = 91 mΩ
• Ultra Low Gate Charge (Typ. Qg = 110 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 313 pF)
• 100% Avalanche Tested
Applications
• Lighting
• Solar Inverter
• AC-DC Power Supply
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy.
Consequently, SuperFET II MOSFET is very suitable for the
switching power applications such as PFC, server/telecom
power, FPD TV power, ATX power and industrial power
applications. SuperFET® II FRFET® MOSFET’s optimized body
diode reverse recovery performance can remove additional
component and improve system reliability.
D
GDS TO-220
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
S
(f > 1Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient ,Max.
FCP104N60F
600
±20
±30
37
24
114
809
6.8
3.57
50
100
357
2.85
-55 to +150
300
FCP104N60F
0.35
62.5
Unit
V
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2013 Fairchild Semiconductor Corporation
FCP104N60F Rev. C3
1
www.fairchildsemi.com
1 page  
Figure 12. Gate Charge Test Circuit & Waveform
V10GVS
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
©2013 Fairchild Semiconductor Corporation
FCP104N60F Rev. C3
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FCP104N60F.PDF ] | |
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