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Fairchild Semiconductor - N-Channel SuperFET II MOSFET

Numéro de référence FCD620N60ZF
Description N-Channel SuperFET II MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FCD620N60ZF fiche technique
FCD620N60ZF
N-Channel SuperFET® II FRFET® MOSFET
600 V, 7.3 A, 620 mΩ
November 2013
Features
• 650 V @ TJ = 150oC
• Typ. RDS(on) = 528 mΩ
• Ultra Low Gate Charge (Typ. Qg = 20 nC)
• Low Effective output Capacitance (Typ. Coss(eff.) = 71 pF)
• 100% Avalanche Tested
• ESD Improved Capacity
• RoHS Compliant
Applications
• LCD / LED / PDP TV and Monitor Lighting
• Solar Invertor / AC-DC Power Supply
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications. SuperFET
II FRFET® MOSFET’s optimized body diode reverse recovery
performance can remove additional component and improve
system reliability.
D
G
S
D
D-PAK
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
- DC
- AC
(f > 1 Hz)
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
FCD620N60ZF
600
±20
±30
7.3
4.6
21.9
135
1.5
0.89
100
20
89
0.71
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCD620N60ZF
1.4
100
Unit
oC/W
©2013 Fairchild Semiconductor Corporation
FCD620N60ZF Rev. C3
1
www.fairchildsemi.com

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