Datasheet FCD600N60Z-PDF.HTML Equivalent ( PDF )

N.º

Número de pieza

Descripción

Fabricantes

FCD Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	FCD1300N80Z	MOSFET, Transistor FCD1300N80Z — N-Channel SuperFET® II MOSFET FCD1300N80Z N-Channel SuperFET® II MOSFET 800 V, 4 A, 1.3  August 2014 Features • RDS(on) = 1.05 Typ.) • Ultra Low Gate Charge (Typ. Qg = 16.2 nC) • Low Eoss (Typ. 1.57 uJ @ 400V) • Low Effective Output Capacitance (Typ. Coss(eff	Fairchild Semiconductor	mosfet
2	FCD2250N80Z	MOSFET, Transistor FCD2250N80Z — N-Channel SuperFET® II MOSFET December 2014 FCD2250N80Z N-Channel SuperFET® II MOSFET 800 V, 2.6 A, 2.25  Features • RDS(on) = 1.8 Typ.) • Ultra Low Gate Charge (Typ. Qg = 11 nC) • Low Eoss (Typ. 1.1 uJ @ 400V) • Low Effective Output Capacitance (Typ. Coss(ef	Fairchild Semiconductor	mosfet
3	FCD3400N80Z	MOSFET, Transistor FCD3400N80Z / FCU3400N80Z — N-Channel SuperFET® II MOSFET March 2015 FCD3400N80Z / FCU3400N80Z N-Channel SuperFET® II MOSFET 800 V, 2 A, 3.4 Ω Features • RDS(on) = 2.75 Ω (Typ.) • Ultra Low Gate Charge (Typ. Qg = 7.4 nC) • Low Eoss (Typ. 0.9 uJ @ 400V) • Low Effective Output Capacit	Fairchild Semiconductor	mosfet
4	FCD380N60E	N-Channel MOSFET FCD380N60E N-Channel MOSFET March 2013 FCD380N60E N-Channel SuperFET® II MOSFET 600 V, 10.2 A, 380 mΩ Features • 650 V @TJ = 150°C • Max. RDS(on) = 380 mΩ • Ultra Low Gate Charge (Typ. Qg = 34 nC) • Low Effective Output Capacitance (Typ. Coss.eff = 97 pF) • 100% Avalanche Tested Des	Fairchild Semiconductor	mosfet
5	FCD4B14	Thermal Fingerprint Sensor with 0.4 mm x 14 mm Sensing Area and Digital Output Features • • • • • • • • • • • • Sensitive Layer Over a 0.8 µm CMOS Array Image Zone: 0.4 x 14 mm = 0.02" x 0.55" Image Array: 8 x 280 = 2240 pixels Pixel Pitch: 50 µm x 50 µm = 500 dpi Pixel Clock: up to 2 MHz Enabling up to 1780 Frames per Second Die Size: 1.7 x 17.3 mm	ATMEL Corporation	sensor
6	FCD4B14CC	Thermal Fingerprint Sensor with 0.4 mm x 14 mm Sensing Area and Digital Output Features • • • • • • • • • • • • Sensitive Layer Over a 0.8 µm CMOS Array Image Zone: 0.4 x 14 mm = 0.02" x 0.55" Image Array: 8 x 280 = 2240 pixels Pixel Pitch: 50 µm x 50 µm = 500 dpi Pixel Clock: up to 2 MHz Enabling up to 1780 Frames per Second Die Size: 1.7 x 17.3 mm	ATMEL Corporation	sensor
7	FCD4B14CCB	Thermal Fingerprint Sensor with 0.4 mm x 14 mm Sensing Area and Digital Output Features • • • • • • • • • • • • Sensitive Layer Over a 0.8 µm CMOS Array Image Zone: 0.4 x 14 mm = 0.02" x 0.55" Image Array: 8 x 280 = 2240 pixels Pixel Pitch: 50 µm x 50 µm = 500 dpi Pixel Clock: up to 2 MHz Enabling up to 1780 Frames per Second Die Size: 1.7 x 17.3 mm	ATMEL Corporation	sensor

Esta página es del resultado de búsqueda del FCD600N60Z-PDF.HTML. Si pulsa el resultado de búsqueda de FCD600N60Z-PDF.HTML se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap