DataSheetWiki


IPLU300N04S4-R8 fiches techniques PDF

Infineon - Power-Transistor

Numéro de référence IPLU300N04S4-R8
Description Power-Transistor
Fabricant Infineon 
Logo Infineon 





1 Page

No Preview Available !





IPLU300N04S4-R8 fiche technique
IPLU300N04S4-R8
OptiMOS-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant); 100% lead free
• Ultra low Rds(on)
• 100% Avalanche tested
Product Summary
VDS
RDS(on)
ID
40 V
0.77 mW
300 A
H-PSOF-8-1
Tab
8
1 Tab
1
8
Type
IPLU300N04S4-R8
Package
H-PSOF-8-1
Marking
4N04R8
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2) E AS I D=150 A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
Value
300
300
1200
750
300
±20
429
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2014-08-12

PagesPages 9
Télécharger [ IPLU300N04S4-R8 ]


Fiche technique recommandé

No Description détaillée Fabricant
IPLU300N04S4-R7 Power-Transistor Infineon
Infineon
IPLU300N04S4-R8 Power-Transistor Infineon
Infineon

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche