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IPD90N10S4-06 fiches techniques PDF

Infineon - Power-Transistor

Numéro de référence IPD90N10S4-06
Description Power-Transistor
Fabricant Infineon 
Logo Infineon 





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IPD90N10S4-06 fiche technique
OptiMOSTM-T2 Power-Transistor
Features
• N-channel - Normal Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
IPD90N10S4-06
Product Summary
VDS
RDS(on),max
ID
100 V
6.7 mW
90 A
PG-TO252-3-313
TAB
1
3
Type
IPD90N10S4-06
Package
Marking
PG-TO252-3-313 4N1006
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V1)
Pulsed drain current2)
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D,pulse T C=25°C
E AS I D=45A
I AS -
V GS
-
P tot T C=25°C
T j, T stg -
Value
90
72
360
250
70
±20
136
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2014-06-30

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